PART |
Description |
Maker |
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
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CDIL[Continental Device India Limited]
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FZT651 |
60 Volt VCEO, 3 Amp continuous current.
|
TY Semiconductor Co., Ltd
|
LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
CSA1316BL CSC3329GR |
0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 350 - 700 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
SPD3900 SPD3901 SPD3902 SPD3903 SPD SPDS SPD3899 R |
20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER
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Solid States Devices, Inc Solid States Devices, I...
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MOC3010-M MOC3011-M MOC3012-M MOC3020-M MOC3021-M |
6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK) 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
|
Fairchild Semiconductor
|
MOC3010M05 MOC3023M MOC3010M MOC3011M MOC3012M MOC |
6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
|
FAIRCHILD[Fairchild Semiconductor]
|
CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode 3.3 volt zener diode 5.1 volt zener diode 3.9 volt zener diode 2.4 volt zener diode LEADLESS PACKAGE FOR SURFACE MOUNT 2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85 2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85 2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 4.7 volt zener diode 5.6 volt zener diode 2.2 volt zener diode 3.6 volt zener diode 2.0 volt zener diode
|
Compensated Devices Incorporated CDI-DIODE[Compensated Deuices Incorporated]
|
BCX69 BCX69-25 BCX69-16 BCX69-10 |
PNP Silicon AF Transistors 自动对焦进步党硅晶体 ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% General Purpose Transistors - SOT89; VCEO=20V; hFE=85..375 General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375 General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250
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INFINEON[Infineon Technologies AG]
|
ASI10654 TVV005 |
NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V))
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662 |
NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10 |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V))
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|